Group III-Nitrides semiconductor materials, including GaN, InN, AlN, InGaN, AlGaN and AlInGaN, i....

In the 1950s Shockley predicted that SiC would quickly replace Si as a result of its superior mat...

Through their application in energy-efficient and environmentally friendly devices, zinc oxide (Z...

This handbook addresses the development of energy-efficient, environmentally friendly solid-state...

This book explores the history and latest developments in the SiC field, with an emphasis on the ...

Through their application in energy-efficient and environmentally friendly devices, zinc oxide (Z...

This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for t...

Recently there have been major achievements in the study of semiconductor interfaces and microstr...

Devices, nanoscale science and technologies based on GaN and related materials, have achieved gre...

III-Nitride semiconductor materials ? (Al, In, Ga)N ? are excellent wide band gap semiconductors ...

In the 1950s Shockley predicted that SiC would quickly replace Si as a result of its superior mat...

Due to the recent discovery of the room-temperature visible light emission from porous silicon (P...

Recently there have been major achievements in the study of semiconductor interfaces and microstr...

This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for t...